Chalgogenides of transition metals on dielectric substrates. MoS2 and WS2 in the form of a film are obtained by chemical vapor deposition on the surface of sapphire or silicon with silicon oxide.
A detailed description of the method of preparation and analysis of samples is described in our article published in the journal MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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